Published 1990
| Version v1
Book
CVD-W/Sp-W interconnection for future ULSIS
- 1. Central Research Lab., Hitachi, Ltd., Kokubunji, Tokyo 185 (Japan)
- 2. Semiconductor Design and Development Center, Hitachi, Ltd., Kodaira, Tokyo 187 (Japan)
Description
CVD-W/Sp-W interconnect technology is developed for submicron ULSIs. Sp-W is used as both an adhesion layer and a barrier layer. Sp-W not only prevents defects such as encroachment or worm holes against H2 reduction CVD, but also provides low contact resistance. CVD-W/Sp-W interconnection, which have good step coverage and electrical properties, is a candidate for use in future ULSIs
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (USA)
- ISBN
- 1-55899-086-2
- Imprint Title
- Tungsten and other advanced metals for VLSI/ULSI applications 5
- Imprint Pagination
- 427 p.
- Journal Page Range
- p. 201-208.
Conference
- Title
- 5. tungsten and other advanced metals for VLSI/ULSI applications workshop.
- Dates
- 20-21 Sep 1989.
- Place
- San Mateo, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22015253
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; FABRICATION; INTEGRATED CIRCUITS; SPUTTERING; TUNGSTEN
- Descriptors DEC
- CHEMICAL COATING; DEPOSITION; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; ELEMENTS; METALS; PHYSICAL PROPERTIES; SURFACE COATING; TRANSITION ELEMENTS
Optional Information
- Secondary number(s)
- CONF-8909348--.