Published October 2015 | Version v1
Journal article Metadata-only

Structural, electrical and multiferroic properties of La-doped mullite Bi2Fe4O9 thin films

Creators

  • 1. Department of Physics, Changwon National University, Changwon, Gyeongnam 641-773 (Korea, Republic of)
  • 2. Functional Ceramics Group, Korea Institute of Materials Science, Changwon, Gyeongnam 641-831 (Korea, Republic of)

Description

Highlights: • Chemical solution deposited La-doped Bi2Fe4O9 thin film. • Structural, electrical and multiferroic properties were investigated. • La-doped Bi2Fe4O9 exhibited enhanced electrical and multiferroic properties. - Abstract: Thin films of (Bi2−xLax)Fe4O9 (x = 0 and x = 0.05) were prepared on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by using a chemical solution deposition method to investigate structural, microstructural, electrical and multiferroic properties. Both the thin films were crystallized in mullite type phases with orthorhombic structures containing no secondary and impurity phases, which was confirmed by X-ray diffraction and Raman spectroscopy studies. The (Bi1.95La0.05)Fe4O9 thin film exhibited improved electrical and multiferroic properties at room-temperature. The leakage current density of the (Bi1.95La0.05)Fe4O9 thin film was one order of magnitude lower than that of the Bi2Fe4O9 thin film. Furthermore, in the thin film form, (Bi2−xLax)Fe4O9 exhibited better stability against electrical breakdowns and enhanced multiferroic properties

Availability note (English)

Available from http://dx.doi.org/10.1016/j.materresbull.2015.04.054

Additional details

Identifiers

DOI
10.1016/j.materresbull.2015.04.054;
PII
S0025-5408(15)00312-8;

Publishing Information

Journal Title
Materials Research Bulletin
Journal Volume
70
Journal Page Range
p. 279-283
ISSN
0025-5408
CODEN
MRBUAC

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47045723
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BISMUTH COMPOUNDS; DEPOSITION; DOPED MATERIALS; ELECTRICAL PROPERTIES; FERRITES; IMPURITIES; LANTHANUM ADDITIONS; LEAKAGE CURRENT; MAGNETIC PROPERTIES; MICROSTRUCTURE; MULLITE; ORTHORHOMBIC LATTICES; RAMAN SPECTROSCOPY; SILICON OXIDES; SOL-GEL PROCESS; STABILITY; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION
Descriptors DEC
ALLOYS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CURRENTS; DIFFRACTION; ELECTRIC CURRENTS; FERRIMAGNETIC MATERIALS; FILMS; INORGANIC ION EXCHANGERS; ION EXCHANGE MATERIALS; IRON COMPOUNDS; LANTHANUM ALLOYS; LASER SPECTROSCOPY; MAGNETIC MATERIALS; MATERIALS; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH ADDITIONS; RARE EARTH ALLOYS; SCATTERING; SILICON COMPOUNDS; SPECTROSCOPY; THREE-DIMENSIONAL LATTICES; TRANSITION ELEMENT COMPOUNDS

Optional Information

Copyright
Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.