Electrical anisotropy properties of ZnO nanorods analyzed by conductive atomic force microscopy

Highlights: ► The electrical properties of one individual lying ZnO nanorod were performed by C-AFM measurement. ► Inhomogeneous spatial current distribution was detected. ► Current was detected along the side facets while no current was detected in the top plane for ZnO nanorod. ► The side facets were more conductive than the top facets of ZnO nanorods. - Abstract: In this study, we have prepared ZnO nanorods on cracked GaN substrates using aqueous solution method. Unique electrical characterization of one individual lying ZnO nanorod is analyzed by conductive atomic force microscopy (C-AFM). Effect of anisotropy properties on the conductivity of a single nanorod has been investigated. The current maps of ZnO nanorods have been simultaneously recorded with the topography which is gained by AFM-contact mode. The C-AFM measurement present local current–voltage (I–V) characteristics of the side facets of one individual lying nanorod, however, no current is detected on the top facets of ZnO nanorods. Measurement results indicate that the side facets are more electrically active than the top facets of ZnO nanorods due to lower Schottky barrier height of the side facets.