Raman scattering and photoluminescence of porous silicon

Raman scattering, photoluminescence and optical reflectivity of porous silicon layers prepared under different regimes of electrochemical etching were studied. The dependence of the optical thickness of the porous silicon layers as well as that of photoluminescence and Raman scattering intensities on the duration and current density of anodization was found to be nonmonotonous. It was shown that photoluminescence spectra were independent of the pre-treatment and the character of Raman scattering spectrum variated at the current density exceeding a certain value. 14 refs.; 6 figs