Preparation of buried insulation in Si with the use of proton implantation

This paper presents the results of the studies which have been conducted to investigate buried insulation layers in silicon formed by proton and H-ions implantation. Proton and H-ions were implanted with energies from 50 to 500 keV and doses from 500 to 10000 mkC/cm2. The samples were annealed at temperatures from 300 to 1150 C for 10-15 s. Specific resistance of the buried layer obtained was found to be equal to 103 Ohm·cm