A study on CdCl2 activation of CBD-CdS films
Creators
- 1. Sri Lanka Technological Campus. Research and International Affairs (Sri Lanka)
- 2. University of Kelaniya. Department of Physics (Sri Lanka)
- 3. University of Peradeniya. Department of Physics (Sri Lanka)
- 4. University of Peradeniya. Postgraduate Institute of Science (Sri Lanka)
- 5. Università Degli Studi Di Brescia. Department of Information Engineering (Italy)
Description
Cadmium sulfide (CdS) thin films were deposited using chemical bath deposition (CBD) technique on fluorine-doped tin oxide glass substrates. Cadmium sulfate, thiourea, and ammonium hydroxide were used as Cd source, S source, and the complexing agent, respectively in the reaction bath. The post-deposition CdCl2 activation of chemical bath deposited CdS (CBD-CdS) thin films was done by dip coating in a saturated CdCl2 bath. X-ray diffractograms show the growth of large CdS grains with better crystalline quality over the recrystallization process due to CdCl2 treatment. The development of large clusters was determined to be due to coalescence of smaller clusters. The photoelectrochemical (PEC) cell (CdS/Na2S2O3/Pt) parameters, such as VOC and ISC for CdCl2 activated CBD-CdS thin films were found to be higher compared to untreated CBD-CdS thin films. The improved effective surface area of the film and higher carrier concentration due to grain boundary passivation could be the reason for higher VOC and ISC values found in CdCl2-treated CdS films. Additionally, all the CdCl2-treated CdS films showed an increase in the optical transmittance spectra and bandgap compared to untreated CdS films. Relative energy band edge position of the grown CdS films was found to be adjustable with the CdCl2 treatment time. The best photoactivity was found for the CdS films which were dip-coated for 10 min in CdCl2 solution.
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Materials Science. Materials in Electronics
- Journal Volume
- 31
- Journal Issue
- 16
- Journal Page Range
- p. 13330-13336
- ISSN
- 0957-4522
- CODEN
- JSMEEV
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55103219
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMMONIUM HYDROXIDES; CADMIUM; CADMIUM SULFATES; COALESCENCE; DEPOSITION; DEPOSITS; DIP COATING; DOPED MATERIALS; GRAIN BOUNDARIES; PASSIVATION; RECRYSTALLIZATION; SUBSTRATES; SURFACE AREA; THIN FILMS; THIOUREA; TIN OXIDES
- Descriptors DEC
- AMMONIUM COMPOUNDS; ANTITHYROID DRUGS; CADMIUM COMPOUNDS; CARBONIC ACID DERIVATIVES; CHALCOGENIDES; DEPOSITION; DRUGS; ELEMENTS; FILMS; HYDROGEN COMPOUNDS; HYDROXIDES; MATERIALS; METALS; MICROSTRUCTURE; ORGANIC COMPOUNDS; ORGANIC SULFUR COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; SULFATES; SULFUR COMPOUNDS; SURFACE COATING; SURFACE PROPERTIES; THIOUREAS; TIN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020