High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ∼ 3.3 μm)

Two designs of light-emitting diodes (LEDs) based on InAsSbP/InAs/InAsSbP double hetero-structures grown by metal-organic vapor phase epitaxy on p- and n-InAs substrates have been studied. The current-voltage and electroluminescence characteristics of the LEDs are analyzed. It is shown that the LED design with a light-emitting crystal (chip) mounted with the epitaxial layer down on the LED case and emission extracted through the n-InAs substrate provides better heat removal. As a result, the spectral characteristics remain stable at increased injection currents and the quantum efficiency of radiative recombination is higher. The internal quantum efficiency of light-em itting structures with an emission wavelength λ = 3.3-3.4 μm is as high as 22.3%. The optical emission power of the LEDs is 140 μW at a current of 1 A in the quasi-continuous mode and reaches a value of 5.5 mW at a current of 9 A in the pulsed mode.