Published 1998 | Version v1
Journal article Metadata-only

Infrared spectroscopy of silicon nitride formation under ion surface bombardment

Creators

  • 1. Inst. Mikroehlektronoki RAN., Yaroslavl' (Russian Federation)

Description

Investigation of silicon nitride formation under low-energy nitrogen ion bombardment of silicon surface is carried out by the method of infrared Fourier spectroscopy. It is established that the spectral characteristics of IR absorption correlates with structural variations in the near-surface layer of an irradiated semiconductor

Additional details

Additional titles

Original title (Russian)
Исследование процесса формирования нитрида кремния при бомбардировке поверхности ионами азота

Publishing Information

Journal Title
Izvestiya Akademii Nauk. Rossijskaya Akademiya Nauk. Seriya Fizicheskaya
Journal Volume
62
Journal Issue
4
Journal Page Range
p. 703-709
ISSN
1026-3489
CODEN
IRAFEO

Conference

Title
13. International Conference on Ion Surface Interaction
Original Conference Title
13. Mezhdunarodnaya Konferentsiya po Vzaimodejstviyu Ionov c Poverkhnost'yu
Dates
1-5 Sep 1997
Place
Zvenigorod (Russian Federation)

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
31004848
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
FOURIER TRANSFORM SPECTROMETERS; INFRARED SPECTRA; INFRARED SPECTROMETERS; ION BEAMS; NITROGEN IONS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SILICON; SILICON NITRIDES; TARGETS
Descriptors DEC
BEAMS; CHARGED PARTICLES; ELEMENTS; IONS; MEASURING INSTRUMENTS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; RADIATION EFFECTS; SEMIMETALS; SILICON COMPOUNDS; SPECTRA; SPECTROMETERS

Optional Information

Notes
14 refs., 3 figs., 1 tab.