Published June 15, 2014 | Version v1
Journal article

Study on growth mechanisms and electronic structures of polar NiO(1 1 1) ultrathin films using iron oxide buffer layers

  • 1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100190 (China)
  • 2. School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China)

Description

Highlights: • Polar NiO(1 1 1) films were grown on FeO(1 1 1), Fe3O4(1 1 1), Fe2O3(0 0 0 1) buffer layers. • Iron oxide buffer layers reduced the lattice mismatch between NiO(1 1 1) and Mo(1 1 0). • Interfacial reaction between NiO and iron oxides decreased the interfacial energy. - Abstract: Polar surfaces of metal oxides have attracted considerable attention in fundamental science and technological applications because of their peculiar stabilization mechanisms and unusual adsorption and catalytic properties. In this study, various ordered iron oxide films, including FeO(1 1 1), Fe3O4(1 1 1) and Fe2O3(0 0 0 1), were successfully used as the buffer layers for the growth of polar NiO(1 1 1) films with several nanometer thickness. The results indicated that the iron oxide buffer layers reduced the lattice mismatch between NiO(1 1 1) and Mo(1 1 0) substrate, and also decreased the interfacial energy by means of the interfacial reaction between NiO and iron oxide surfaces, benefiting the initial nucleation and the growth of polar NiO(1 1 1) films. This study will be essential for understanding the physical and chemical properties of polar surfaces

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jallcom.2014.02.023

Additional details

Identifiers

DOI
10.1016/j.jallcom.2014.02.023;
PII
S0925-8388(14)00351-X;

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
598
Journal Page Range
p. 224-229
ISSN
0925-8388
CODEN
JALCEU

Optional Information

Copyright
Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.