Published June 15, 1994
| Version v1
Journal article
Systematic study of neutron irradiation effects on the performance of FZ and MCZ silicon detectors
Creators
- 1. INFN-Milan, 20133 Milan (Italy)
- 2. Universite de Montreal, Montreal, PQ, H3C 3JT (Canada)
Description
Charge collection efficiency dependence on reverse bias voltage (VB) and on a neutron fluence (Φ) was studied for both Float-Zone (FZ) and Magnetic-Czochralski (MCZ) silicon detectors, irradiated with fast neutron fluences, larger than 1013 n/cm2. For both types of irradiated detectors, the charge collection efficiency was found to have a logarithimc dependence on Φ and its dependence on VB indicated that the relation between charge-carrier concentration and full depletion voltage is not according to the standard equation of a p+-n-n+ device. ((orig.))
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 345
- Journal Issue
- 2
- Journal Page Range
- p. 250-255.
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 26002098
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CHARGE CARRIERS; CHARGE COLLECTION; EFFICIENCY; N-TYPE CONDUCTORS; NEUTRON BEAMS; NEUTRON FLUENCE; PHYSICAL RADIATION EFFECTS; SI SEMICONDUCTOR DETECTORS; SILICON
- Descriptors DEC
- BEAMS; ELEMENTS; MATERIALS; MEASURING INSTRUMENTS; NUCLEON BEAMS; PARTICLE BEAMS; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Collaborations
- SICAPO Collaboration.