High-sensitivity total reflection X-ray fluorescence spectroscopy of silicon wafers using synchrotron radiation

We explored total reflection X-ray fluorescence spectroscopy (TXRF) with a synchrotron source to achieve high sensitivities to surface metals on silicon wafers. Most recently, we directly demonstrated a sensitivity of 3x108 atoms/cm2 for third-row transition metal elements. The configuration appears to be capable of high sensitivities for a wide range of elements. (author)