Published August 2003
| Version v1
Journal article
Trends in band-gap pressure coefficients in CulnVI2 (VI = S, Se, Te)
Description
The pressure dependences of the absorption edges in single crystals of CuInS2, CuInSe2, and CuInTe2 are studied at room temperature in this work. The linear pressure coefficients of the band gaps are 23 meV/GPa, 29 meV/GPa, and 53 meV/GPa for CuInS2, CuInSe2, and CuInTe2, respectively. We found that the pressure coefficient of the energy band gap changes significantly with anion atomic number and that the empirical rule for the pressure deformation potential suggested for zinc-blende compounds has to be modified for CuInVI2 chalcopyrite semiconductors
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 39
- Journal Issue
- 2
- Series
- 12 refs, 4 figs
- Journal Page Range
- p. 336-339
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 35045448
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION; ATOMIC NUMBER; CHALCOPYRITE; MONOCRYSTALS; PRESSURE COEFFICIENT
- Descriptors DEC
- CRYSTALS; MINERALS; REACTIVITY COEFFICIENTS; SORPTION; SULFIDE MINERALS