A 1.0 V differential VCO in 0.13 μm CMOS technology
Creators
- 1. State Key Laboratory of ASIC and System, Fudan University, Shanghai, 201203 (China)
Description
A differential complementary LC voltage controlled oscillator (VCO) with high Q on-chip inductor is presented. The parallel resonator of the VCO consists of inversion-mode MOS (I-MOS) capacitors and an on-chip inductor. The resonator Q factor is mainly limited by the on-chip inductor. It is optimized by designing a single turn inductor that has a simulated Q factor of about 35 at 6 GHz. The proposed VCO is implemented in the SMIC 0.13 μm 1P8M MMRF CMOS process, and the chip area is 1.0 x 0.8 mm2. The free-running frequency is from 5.73 to 6.35 GHz. When oscillating at 6.35 GHz, the current consumption is 2.55 mA from a supply voltage of 1.0 V and the measured phase noise at 1 MHz offset is -120.14 dBc/Hz. The figure of merit of the proposed VCO is -192.13 dBc/Hz. (semiconductor integrated circuits)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/32/2/025010Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 32
- Journal Issue
- 2
- Journal Page Range
- [4 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43013171
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CAPACITORS; ELECTRIC POTENTIAL; GHZ RANGE; INTEGRATED CIRCUITS; MHZ RANGE; OSCILLATORS; RESONATORS; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SOLENOIDS
- Descriptors DEC
- CHALCOGENIDES; ELECTRIC COILS; ELECTRICAL EQUIPMENT; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; EQUIPMENT; FREQUENCY RANGE; MATERIALS; MICROELECTRONIC CIRCUITS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS