Published February 11, 2009 | Version v1
Journal article

Spectroscopy of shallow InAs/InP quantum wire nanostructures

  • 1. Department of Physics, University of Arkansas, Fayetteville, AR 72701 (United States)
  • 2. Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, 12489 Berlin (Germany)
  • 3. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 45, 03028 Kiev (Ukraine)
  • 4. Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701 (United States)

Description

A comprehensive investigation of the optical properties of InAs/InP(001) quantum wires (QWrs) and their parent quantum well system formed by the deposition of 4 ML (monolayers) of InAs on InP is carried out by means of temperature dependent photoluminescence (PL) and Fourier transform infrared spectroscopy. Unusual two-branch switching of the excitonic PL band maxima is revealed in the temperature dependence for both wires and wells. This is interpreted in terms of the thermal activation of excitonic ground states of the confined nanostructures. Strong modification of the absorbance line shape leading to the appearance of flat spectral regions in the room temperature spectrum of a QWr sample is interpreted in terms of thermally induced change of the dimensionality: from 1D to anisotropic 2D. This change of dimensionality is detected also in the polarized absorbance measurements through the disappearance or significant reduction of the polarization anisotropy in the regions of the hh1-e1 (hh: heavy hole; e: electron) and lh1-e1 (lh: light hole) transitions in QWrs.

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/20/6/065401

Additional details

Identifiers

DOI
10.1088/0957-4484/20/6/065401;
PII
S0957-4484(09)91059-5;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
20
Journal Issue
6
Journal Page Range
[10 p.]
ISSN
0957-4484