Published September 2009
| Version v1
Journal article
Simulation of influence of the charge embedded in the oxide layer on the lateral C-V characteristic of coaxial MOSFET
Creators
- 1. Urgench state university, Urgench (Uzbekistan)
- 2. AS RU, Heat physics department, Tashkent (Uzbekistan)
Description
Simulation of influence of the charge embedded in the oxide layer of coaxial cylindrically symmetric MOSFET on a source-substrate C-V characteristic is considered. The results show that embedding charge increases capacity of the specified transition in some times at voltage on the transition up to 5 volts. This property of the MOSFET can be used in memory elements. (authors)
Additional details
Additional titles
- Original title (Russian)
- Моделирование влияния заряда, встроенного в оксидный слой, на боковую вольтемкостную характеристику коаксиального MOP транзистора
Publishing Information
- Journal Title
- Uzbekiston Fizika Zhurnali
- Journal Volume
- 11
- Journal Issue
- 5-6
- Journal Page Range
- p. 351-354
- ISSN
- 1025-8817
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 41099896
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CAPACITY; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; FOURIER TRANSFORMATION; LAYERS; MOSFET; OXIDES; P-N JUNCTIONS; SIMULATION; SUBSTRATES
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL PROPERTIES; FIELD EFFECT TRANSISTORS; INTEGRAL TRANSFORMATIONS; MOS TRANSISTORS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; TRANSFORMATIONS; TRANSISTORS
Optional Information
- Notes
- 6 refs., 3 figs.