Published October 20, 2008 | Version v1
Journal article

Thermoelectric properties of Al-doped Mg2Si1-xSnx (x ≤ 0.1)

  • 1. Department of Electronic Materials, Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553 (Japan)

Description

The thermoelectric properties of Al-doped Mg2Si1-xSnx (x = 0.0-0.1) [Mg2Si1-xSnx:Al = 1:y (0.00 ≤ y ≤ 0.02)] fabricated by spark plasma sintering have been characterized by Hall effect measurements at 300 K and by measurements of electrical resistivity (ρ), the Seebeck coefficient (S), and thermal conductivity (κ) between 300 and 900 K. Al-doped Mg2Si1-xSnx samples are n-type in the measured temperature range. By Al-doping, electron concentration is controlled up to 5.3 x 1019 cm-3 in the composition range 0.0 ≤ x ≤ 0.1. Al-doped Mg2Si0.9Sn0.1 shows a maximum value of the figure of merit ZT of 0.68 at 864 K, which is 6 times larger than that of nondoped Mg2Si0.9Sn0.1

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jallcom.2007.11.029

Additional details

Identifiers

DOI
10.1016/j.jallcom.2007.11.029;
PII
S0925-8388(07)02155-X;

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
466
Journal Issue
1-2
Journal Page Range
p. 335-340
ISSN
0925-8388
CODEN
JALCEU

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.