Response of windowless silicon avalanche photo-diodes to electrons in the 90–900 eV range

We report on the characterization of the response of windowless silicon avalanche photo-diodes to electrons in the 90-900 eV energy range. The electrons were provided by a monoenergetic electron gun present in the LASEC laboratories of University of Roma Tre. We find that the avalanche photo-diode generates a current proportional to the current of electrons hitting its active surface. The gain is found to depend on the electron energy $E_e$, and varies from $2.147\pm 0.027$ (for $E_e=90$ eV) to $385.8\pm 3.3$ (for $E_e=900$ eV), when operating the diode at a bias of $V_{apd}=350$ V. This is the first time silicon avalanche photo-diodes are employed to measure electrons with $E_e<1$ keV.