Published September 2012
| Version v1
Journal article
Ohmic contacts to GaP
Description
The short review on creation of low-ohmic contacts to n- and p-GaP is presented. The peculiarities of technological processes influencing on decreasing of the ohmic contact resistance are considered. (authors)
Additional details
Additional titles
- Original title (Russian)
- Омические контакты к GaP
Publishing Information
- Journal Title
- Uzbekiston Fizika Zhurnali
- Journal Volume
- 14
- Journal Issue
- 5-6
- Journal Page Range
- p. 316-321
- ISSN
- 1025-8817
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 45070776
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; GALLIUM PHOSPHIDES; METALS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; REVIEWS
- Descriptors DEC
- DOCUMENT TYPES; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; GALLIUM COMPOUNDS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- 16 refs., 1 fig., 2 tabs.