Published 1991 | Version v1
Book Metadata-only

The role of interfacial microstructure in the mechanical properties of SiC whisker reinforced Si3N4

Creators

  • 1. Dept. of Mining and Metallurgical Engineering, Univ. of Queensland, St. Lucia (Australia)

Description

SiC whisker reinforced Si3N4 can be produced using a number of different methods. These include hot pressing (HP), hot isostatic pressing (HIP), reaction bonding (RB), nitrided pressureless sintering (NPS) and various combinations of these methods. This paper is concerned with the microstructure of SiC whisker reinforced Si3N4 materials fabricated by both nitrided pressureless sintering and hot pressing. Attention has been given to the microstructure of as-sintered materials, crack paths within the microstructure and also microstructural changes that occur during high temperature deformation

Additional details

Publishing Information

Publisher
Trans Tech Publ.
Imprint Place
Aedermannsdorf (Switzerland)
ISBN
0-87849-608-4
Imprint Title
International ceramic conference. AUSTCERAM '90
Imprint Pagination
816 p.
Journal Volume
53-55
Series
Key Engineering Materials.
Journal Page Range
p. 167-172.

Conference

Title
Ceramics technology - sharing the knowledge.
Acronym
International ceramic conference and exhibition (Austceram '90)
Dates
26-31 Aug 1990.
Place
Perth (Australia).

INIS

Country of Publication
Switzerland
Country of Input or Organization
Switzerland
INIS RN
23038709
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRACK PROPAGATION; CRACKS; DEFORMATION; FRACTURE PROPERTIES; HEAT TREATMENTS; HOT PRESSING; MECHANICAL PROPERTIES; MICROSTRUCTURE; REINFORCED MATERIALS; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDES; SILICON NITRIDES; SINTERED MATERIALS; SINTERING; TEMPERATURE RANGE 1000-4000 K; TRANSMISSION ELECTRON MICROSCO; WHISKERS
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; CRYSTAL STRUCTURE; CRYSTALS; ELECTRON MICROSCOPY; FABRICATION; MATERIALS; MATERIALS WORKING; MICROSCOPY; MONOCRYSTALS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; PRESSING; SILICON COMPOUNDS; TEMPERATURE RANGE