Published 2003
| Version v1
Journal article
Trapping effects in different silicon materials after pion and proton irradiation
Creators
- 1. Inst. f. Exp. Physik, Univ. Hamburg (Germany)
- 2. DESY, Hamburg (Germany)
Description
no abstract available
Additional details
Additional titles
- Original title (German)
- Trappingeffekte in verschieden Siliziummaterialien nach Pionen- und Protonenbestrahlung
Publishing Information
- Journal Title
- Verhandlungen der Deutschen Physikalischen Gesellschaft
- Journal Volume
- 38
- Journal Issue
- 2
- Journal Page Range
- p. 19
- ISSN
- 0420-0195
- CODEN
- VDPEAZ
Conference
- Title
- 2003 spring meeting of the German Physical Society, Particle Physics Section, with physics and book exhibition
- Original Conference Title
- Fruehjahrstagung 2003 der Deutschen Physikalischen Gesellschaft (DPG), Fachverband Teilchenphysik, mit Physik- und Buchausstellung
- Dates
- 10-13 Mar 2003
- Place
- Aachen (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 34039323
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CRYSTAL DEFECTS; CZOCHRALSKI METHOD; DIFFUSION; DOPED MATERIALS; GEV RANGE 10-100; HEAT TREATMENTS; HOLES; MEV RANGE 100-1000; PHYSICAL RADIATION EFFECTS; PION BEAMS; PROTON BEAMS; SILICON; SILICON OXIDES; TRAPPED ELECTRONS; TRAPPING
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELECTRONS; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; GEV RANGE; LEPTONS; MATERIALS; MESON BEAMS; MEV RANGE; NUCLEON BEAMS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; RADIATION EFFECTS; SEMIMETALS; SILICON COMPOUNDS
Optional Information
- Collaborations
- RD50-Kollaboration