Some properties of diode structures based on high-resistant p-InSb

Volt-ampere characteristics (VAC) of p-InSb-base diodes were considered; n-p junctions with different base length were obtained by a melt method in vacuum. Various types of diodes were formed depending on the hole density in the base, its surface treatment and temperature. The effect of lighting and magnetic field on VAC was studied. It was established that direct current of long and S-type diodes was heavily affected by a magnetic field and light, which fact was attributed to a variable length of diffusion displacement and a degree to which the deep recombination level was filled. In some diodes a change from diode-type VAC to S-type VAC in a magnetic field was observed, which was explained by a channeling current flow through diode structures and by surface effects