Published May 7, 2014 | Version v1
Journal article Metadata-only

Ferroelectric and ferromagnetic properties of epitaxial BiFeO3-BiMnO3 films on ion-beam-assisted deposited TiN buffered flexible Hastelloy

Creators

  • 1. Los Alamos National Laboratory, Center for Integrated Nanotechnologies, Division of Materials Physics and Applications, Los Alamos, New Mexico 87545 (United States)
  • 2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

Description

Growth of multifunctional thin films on flexible substrates is of great technological significance since such a platform is needed for flexible electronics. In this study, we report the growth of biaxially aligned (BiFeO3)0.5:(BiMnO3)0.5 [BFO-BMO] films on polycrystalline Hastelloy by using a biaxially aligned TiN as a seed layer deposited by ion-beam-assisted deposited and a La0.7Sr0.3MnO3 (LSMO) as a buffer layer deposited by pulsed laser deposition. The LSMO is used not only as a buffer layer but also as the bottom electrode of the BFO-BMO films. X-ray diffraction showed that the BFO-BMO films are biaxially oriented along both in-plane and out-of-plane directions. The BFO-BMO films on flexible metal substrates showed a polarization of 22.9 μC/cm2. The magnetization of the BFO-BMO/LSMO is 62 emu/cc at room temperature

Additional details

Identifiers

DOI
10.1063/1.4869438;

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
115
Journal Issue
17
Journal Page Range
vp.
ISSN
0021-8979
CODEN
JAPIAU

Conference

Title
55. annual conference on magnetism and magnetic materials
Dates
14-18 Nov 2010
Place
Atlanta, GA (United States)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45094953
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BISMUTH COMPOUNDS; CRYSTAL GROWTH; ENERGY BEAM DEPOSITION; EPITAXY; FERRITES; FERROELECTRIC MATERIALS; LASER RADIATION; LAYERS; MAGNETIZATION; MANGANATES; POLARIZATION; POLYCRYSTALS; PULSED IRRADIATION; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TITANIUM NITRIDES; X-RAY DIFFRACTION
Descriptors DEC
COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTALS; DEPOSITION; DIELECTRIC MATERIALS; DIFFRACTION; ELECTROMAGNETIC RADIATION; FERRIMAGNETIC MATERIALS; FILMS; IRON COMPOUNDS; IRRADIATION; MAGNETIC MATERIALS; MANGANESE COMPOUNDS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; OXYGEN COMPOUNDS; PNICTIDES; RADIATIONS; SCATTERING; SURFACE COATING; TEMPERATURE RANGE; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
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