Published 1991
| Version v1
Report
Open
Monte Carlo modelling of the effect of an heavy ion on the operation of a MISFET/SOI
Creators
- 1. CEA Centre d'Etudes de Bruyeres-le-Chatel, 91 (France)
- 2. Paris-11 Univ., 91 - Orsay (France)
Description
Electron-hole pairs are created along the track of an heavy ion, return to the original state of these charge carriers are studied by a Monte Carlo model. The structure studied are MISFET transistors, insulated from the substrate by a buried dielectric. The grid insulating material is silicon nitride and the buried dielectric is Yttria stabilized zirconia. They were chosen because they are more radiation resistant than silicon oxide
Availability note (English)
MF available from INIS under the Report Number.Files
24002673.pdf
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Additional details
Additional titles
- Original title (French)
- Modelisation Monte-Carlo de l'effet d'un ion lourd sur le fonctionnement d'un MISFET/SOI
Publishing Information
- Imprint Pagination
- 5 p.
- Report number
- CEA-CONF--11024
Conference
- Title
- 1. European Conference on Radiations and their Effects on Devices and Systems.
- Acronym
- RADECS 91
- Dates
- 9-12 Sep 1991.
- Place
- Montpellier (France).
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 24002673
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE CARRIERS; FIELD EFFECT TRANSISTORS; HEAVY IONS; MIS TRANSISTORS; MONTE CARLO METHOD; PHYSICAL RADIATION EFFECTS; SIMULATION
- Descriptors DEC
- CALCULATION METHODS; CHARGED PARTICLES; IONS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS