Published January 31, 1998
| Version v1
Journal article
Generation of hard x-ray radiation by irradiation of porous silicon with ultraintense femtosecond laser pulses
Creators
- 1. International Laser Center, M. V. Lomonosov Moscow State University, Moscow (Russian Federation)
- 2. Department of Physics, M.V. Lomonosov Moscow State University, Moscow (Russian Federation)
Description
Irradiation of porous (with porosity in excess of 70%) silicon target with femtosecond laser pulses of 1016 W cm-2 intensity increased by a factor of 3.5 the efficiency of generation of hard x-ray radiation with photon energies E > 8 keV. The increase was 30-fold for E > 2.5 keV. The relationship between this effect and the parameters of the luminescence emitted by porous silicon was investigated. (letters to the editor)
Availability note (English)
Available from http://dx.doi.org/10.1070/QE1998v028n01ABEH001125Additional details
Identifiers
Publishing Information
- Journal Title
- Quantum Electronics (Woodbury, N.Y.)
- Journal Volume
- 28
- Journal Issue
- 1
- Journal Page Range
- p. 1-2
- ISSN
- 1063-7818
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42031433
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- EFFICIENCY; HARD X RADIATION; KEV RANGE; LASER RADIATION; LUMINESCENCE; PHOTONS; POROSITY; POROUS MATERIALS; PULSED IRRADIATION; PULSES; SILICON
- Descriptors DEC
- BOSONS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; EMISSION; ENERGY RANGE; IONIZING RADIATIONS; IRRADIATION; MASSLESS PARTICLES; MATERIALS; PHOTON EMISSION; RADIATIONS; SEMIMETALS; X RADIATION