Structure and properties of CdTe films synthesized from metalloorganic compounds on GaAs substrate

Peculiarities of structure and properties of CdTe films synthesized at high growth rate from metalloorganic compounds on (100) GaAs substrate are investigated. Structural perfection of CdTe epitaxial layers was studied using oscillating-crystal X-ray photographs, electron diffractometry and transmission electron microscopy. CdTe films are shown to be monocrystalline with (100) orientation and by their quality are on a par with bulk samples. The films had p-type conductivity, specific resistance 105-5x106 Ohmxcm, mobility 870 cm2/Vxs, the concentration being 1.5-2x109 cm-3. On the basis of measured at 77 deg photoluminescent spectra of CdTe films, grown at different temperatures, emission bands related to cadmium vacancies and previously not described hν ≅1.18eV emission band are determined