Ion beam analysis of carbon using 12C(p,p'γ) reaction

Carbon concentration of a polymer film on a silicon wafer has been determined using a 12C(p,p') reaction. The coincidence detection of a scattered proton and a γ-ray from the first excited state (Ex=4.4 MeV) of 12C yields the selective determination of the abundance of the carbon. A depth profile of the carbon was obtained by analyzing an energy spectrum of the scattered protons. By using a proton beam with an energy of 8 MeV, the carbon located in the depth region of a few tens μm from the surface can be analyzed