Resistive switching behaviour of multi-stacked PVA/graphene oxide + PVA composite/PVA insulating layer-based RRAM devices

In this study, we have investigated the resistive switching behavior of multi-stacked PVA/GO + PVA composite/PVA insulating layer-based RRAM (resistive random-access memory) as the annealing temperature of the insulating layer was varied between 100 °C, 150 °C, and 200 °C. The fabricated RRAM device with a multi-stacked insulating layer annealed at 200 °C showed relatively good switching properties with a high on/off ratio (∼10⁴) and low V _SET (3.5 ± 0.29 V) and V _RESET (−1.81 ± 0.10 V), which were uniformly distributed over 100 DC sweep cycles. In terms of reliability, multi-stacked insulating layer-based RRAM devices exhibited good retention (>2 × 10³ s) and DC sweep endurance (>80) due to the enhanced stability of the insulating layer by good dispersion and the thermal treatment. The conduction mechanisms of the device at low resistance state (LRS) and high resistance state (HRS) were analyzed through Ohmic conduction LRS and Poole-Frenkel emission of HRS, respectively. In addition, we demonstrated the filamentary switching mechanism of resistive switching in our proposed devices. (paper)