Published May 2012 | Version v1
Journal article

Imaging and Characteristics of a Bimaterial Microcantilever FPA Fabricated using Bulk Silicon Processes

  • 1. School of Electronic and Information Engineering, Beijing Institute of Technology, Beijing 100081 (China)
  • 2. National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Institute of Microelectronics, Peking University, Beijing 100871 (China)

Description

For a focal plane array (FPA) fabricated with a surface sacrificial layer process, the IR flux must transmit through the silicon substrate and the air gap before it reaches the cantilever pixels. Part of the IR radiation energy is therefore lost owing to the reflection and absorption caused by the silicon substrate. We fabricate an infrared FPA consisting of 128 × 128 microcantilever pixels by using a novel bulk micro-electro-mechanical-system process. Thermal images of persons at room temperature are captured to demonstrate the IR imaging capability of the FPA. For the proposed device, the thermal response is calculated to be 4.03 × 10−3, the thermo-mechanical sensitivity is measured to be 0.273 μm/K, the noise equivalent temperature difference is measured to be 200 mK by a gray level change method and the time constant is calculated to be 15 ms under a 10 mTorr pressure. (cross-disciplinary physics and related areas of science and technology)

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/29/5/058502

Additional details

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
29
Journal Issue
5
Journal Page Range
[4 p.]
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45003725
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ABSORPTION; CAPTURE; ELECTROMECHANICS; INFRARED RADIATION; LAYERS; NOISE; REFLECTION; SENSITIVITY; SILICON; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
ELECTROMAGNETIC RADIATION; ELEMENTS; MECHANICS; RADIATIONS; SEMIMETALS; SORPTION; TEMPERATURE RANGE