Published September 14, 2014
| Version v1
Journal article
Erratum: "Tunable photoluminescence of self-assembled GeSi quantum dots by B+ implantation and rapid thermal annealing" [J. Appl. Phys. 115, 233502 (2014)]
Creators
- 1. National Key Laboratory for Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China)
Description
no abstract available
Additional details
Identifiers
- DOI
- 10.1063/1.4895492;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 116
- Journal Issue
- 10
- Journal Page Range
- p. 109902-109902.1
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46012151
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; BORON IONS; GERMANIUM SILICIDES; ION IMPLANTATION; PHOTOLUMINESCENCE; QUANTUM DOTS
- Descriptors DEC
- CHARGED PARTICLES; EMISSION; GERMANIUM COMPOUNDS; HEAT TREATMENTS; IONS; LUMINESCENCE; NANOSTRUCTURES; PHOTON EMISSION; SILICIDES; SILICON COMPOUNDS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC