Published December 15, 2004 | Version v1
Journal article

Empirical pseudopotential study of electronic, positron, and structural properties of Ga1-xAlxN

Creators

  • 1. Department of Physics, Faculty of Science, National University of Singapore, Singapore 119260 (Singapore)

Description

Electronic and positron band structures and charge densities of Ga0.5Al0.5N using the empirical pseudopotential method (EPM) are investigated. For the ternary alloy Ga1-xAlxN, the virtual crystal approximation (VCA) is coupled with the pseudopotential method. The energies along Γ, X and L of Ga1-xAlxN alloy as a function of the mole fraction are calculated. Angular correlation of positron annihilation radiation (ACPAR) along different crystallographic directions in Ga0.5Al0.5N is calculated. Other quantities such as ionicity character and bulk modulus by means of recent models with respect to the mole fraction are discussed

Additional details

Identifiers

DOI
10.1016/j.matchemphys.2004.07.019;
PII
S0254-0584(04)00373-6;

Publishing Information

Journal Title
Materials Chemistry and Physics
Journal Volume
88
Journal Issue
2-3
Journal Page Range
p. 339-347
ISSN
0254-0584
CODEN
MCHPDR

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.