Published February 27, 2006
| Version v1
Journal article
Increased O(1D) metastable density in highly Ar-diluted oxygen plasmas
- 1. Department of Electronics and Electrical Engineering, Keio University, Yokohama Kanagawa 223-8522 (Japan)
- 2. Department of Electric and Electronic Engineering, National Defense Academy, Yokosuka Kanagawa 239-8686 (Japan)
Description
Enhancement of the growth rate of SiO2 with a rare gas diluted O2 plasma is of interest for application to various microelectronics fabrications. The key is the oxygen metastable atom (1D) density, which has the potential for surface activation. We used vacuum ultraviolet optical absorption spectroscopy to detect O(1D) and found a twofold increase in the density of O(1D) due to the dilution with Ar. The density increase is reasonably explained by the increase of the electron density, the oxygen dissociation fraction, and the Ar metastable density, that are experimentally obtained for low O2 fractions
Additional details
Identifiers
- DOI
- 10.1063/1.2180871;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 88
- Journal Issue
- 9
- Journal Page Range
- p. 091501-091501.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37083045
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- ABSORPTION SPECTROSCOPY; ARGON; CRYSTAL GROWTH; DILUTION; DISSOCIATION; ELECTRON DENSITY; FABRICATION; METASTABLE STATES; MICROELECTRONICS; OXYGEN; PLASMA; PLASMA DENSITY; PLASMA DIAGNOSTICS; SILICON OXIDES; ULTRAVIOLET RADIATION
- Descriptors DEC
- CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY LEVELS; EXCITED STATES; FLUIDS; GASES; NONMETALS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; RARE GASES; SILICON COMPOUNDS; SPECTROSCOPY
Optional Information
- Notes
- (c) 2006 American Institute of Physics