Channeling studies of As-grown GaN

Channeling investigation of gallium nitride is reported. The crystalline quality of a number of epitaxially grown GaN layers has been studied. Results from the channeling measurements have been compared with optical investigations of the crystal surfaces and with the GaN layer thicknesses as well as with the calculated values of the minimum surface yield and of the critical angle for channeling. Radiation damage of the crystal due to the analyzing beam has been studied, and a maximum allowable dose for unchanged channeling conditions has been established