Numerical investigation of Auger current density in a InGaN/GaN multiple quantum well solar cell under hydrostatic pressure

This study used a numerical model to analyze the Auger current in c-plane InGaN/GaN multiple-quantum well solar cells (MQWSC) under hydrostatic pressure. Finite difference techniques were employed to acquire energy eigenvalues and their corresponding eigenfunctions of InGaN/GaN MQWSC. Besides, the hole eigenstates were calculated via a 6 x 6 k.p method under applied hydrostatic pressure. Our calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger coefficients had the largest contribution to the total Auger coefficient (i.e., 76 and 20%, respectively). Also, it was found that a pressure change of up to 10 GPa increases the carrier density in the quantum well and barriers. Based on the result, such a change could decrease the exciton binding energy, raise the quantum confinement of carriers, and decrease the Auger current in the multiple-quantum well and barrier regions. The solar cell's performance is better when the Auger current is lower; thus, hydrostatic pressure plays a positive role in the performance of solar cells. (author)