Published March 11, 1995
| Version v1
Journal article
A microscopic explanation for type inversion and the annealing behaviour of radiation damaged silicon detectors
- 1. Brunel Univ., Uxbridge (United Kingdom). Dept. of Physics
- 2. Imperial Coll. of Science and Technology, London (United Kingdom). Blackett Lab.
Description
A semiconductor device model, DLTS measurements and defect kinetics considerations lead us to propose an explanation for the major changes in the macroscopic properties of silicon detectors caused by neutron irradiation. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 371
- Journal Issue
- 3
- Journal Page Range
- p. 575-577.
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 27048461
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ANNEALING; CHARGE CARRIERS; CRYSTAL DEFECTS; KINETICS; LEAKAGE CURRENT; MATHEMATICAL MODELS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SI SEMICONDUCTOR DETECTORS; SILICON; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; TRAPPED ELECTRONS
- Descriptors DEC
- CRYSTAL STRUCTURE; CURRENTS; ELECTRIC CURRENTS; ELECTRONS; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HEAT TREATMENTS; LEPTONS; MATERIALS; MEASURING INSTRUMENTS; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; SEMIMETALS; TEMPERATURE RANGE