Published June 30, 2007 | Version v1
Journal article

The study of dielectric relaxation and glass forming tendency in Cd-Se-Te glassy system

  • 1. National Center for Radiation Research and Technology, Nasr City, Cairo (Egypt)

Description

The dielectric relaxation spectroscopes of Cd xSe70-xTe30 (where x = 0, 5, 7, 10) alloy have been investigated in the temperature range 298-373 K and in the frequency range 100 Hz to 100 kHz near the percolation threshold. The frequency and temperature dependence on the dielectric constant showed a Debye dielectric relaxation process. Using Debye relation, the dielectric constant (ε'), the most probable relaxation time (τ) and the barrier height (W) were estimated for binary ternary chalcogenide systems. In addition, the analysis of the results suggests that the effect of Cd content on electronic conduction of the system. The experimental results support to some extent the above criterion in the case of Cd-Se-Te ternary alloy

Additional details

Identifiers

DOI
10.1016/j.apsusc.2007.02.050;
PII
S0169-4332(07)00268-1;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
253
Journal Issue
17
Journal Page Range
p. 7089-7093
ISSN
0169-4332
CODEN
ASUSEE

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39003126
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CADMIUM ALLOYS; CHALCOGENIDES; DIELECTRIC MATERIALS; FREQUENCY DEPENDENCE; GLASS; RELAXATION; SELENIUM ALLOYS; SEMICONDUCTOR MATERIALS; TELLURIUM ALLOYS; TEMPERATURE DEPENDENCE; TERNARY ALLOY SYSTEMS
Descriptors DEC
ALLOY SYSTEMS; ALLOYS; MATERIALS

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.