Published June 30, 2007
| Version v1
Journal article
The study of dielectric relaxation and glass forming tendency in Cd-Se-Te glassy system
Creators
- 1. National Center for Radiation Research and Technology, Nasr City, Cairo (Egypt)
Description
The dielectric relaxation spectroscopes of Cd xSe70-xTe30 (where x = 0, 5, 7, 10) alloy have been investigated in the temperature range 298-373 K and in the frequency range 100 Hz to 100 kHz near the percolation threshold. The frequency and temperature dependence on the dielectric constant showed a Debye dielectric relaxation process. Using Debye relation, the dielectric constant (ε'), the most probable relaxation time (τ) and the barrier height (W) were estimated for binary ternary chalcogenide systems. In addition, the analysis of the results suggests that the effect of Cd content on electronic conduction of the system. The experimental results support to some extent the above criterion in the case of Cd-Se-Te ternary alloy
Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2007.02.050;
- PII
- S0169-4332(07)00268-1;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 253
- Journal Issue
- 17
- Journal Page Range
- p. 7089-7093
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39003126
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM ALLOYS; CHALCOGENIDES; DIELECTRIC MATERIALS; FREQUENCY DEPENDENCE; GLASS; RELAXATION; SELENIUM ALLOYS; SEMICONDUCTOR MATERIALS; TELLURIUM ALLOYS; TEMPERATURE DEPENDENCE; TERNARY ALLOY SYSTEMS
- Descriptors DEC
- ALLOY SYSTEMS; ALLOYS; MATERIALS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.