Published December 1989 | Version v1
Journal article

Monte Carlo modeling of radiation effect on MOS/SOI transistors

  • 1. Paris-11 Univ., 91 - Orsay (France). Inst. d'Electronique Fondamentale
  • 2. CEA Centre d'Etudes de Bruyeres-le-Chatel, 91 (France)

Description

A particular Monte-Carlo algorithm has been developed in order to study the relaxation of the electron-hole pairs generated by an irradiation. This algorithm has been used to study the diffusion and the energy relaxation of the carriers inside the MISIS structure corresponding to a MISFET on zirconia on silicon

Abstract (French)

On a developpe et mis en oeuvre un logiciel de simulation particulaire Monte-Carlo pour etudier la relaxation des paires electron-trou generees par une irradiation. Ce logiciel a ete utilise pour etudier l'effet d'un ion a travers les differentes couches constituant un transistor MIS a canal superdope sur zircone epitaxiee sur substrat de silicium. Le comportement de la structure MISIS a ete quantifie du point de vue de la diffusion des porteurs et de la relaxation de leur energie

Additional details

Additional titles

Original title (French)
Modelisation Monte-Carlo de l'effet des radiations sur un transistor MOS/SOI

Publishing Information

Journal Title
Annales de Physique (Les Ulis), Colloque
Journal Volume
14
Journal Issue
6
Series
Ann. Phys. (Les Ulis), Colloq.
Journal Page Range
313-320

Conference

Title
Effects on Components and Systems.
Original Conference Title
Radiations: Effets sur les Composants et Systemes. Radecs 89
Acronym
Radecs 89. Radiations
Dates
11-14 Sep 1989.
Place
Montpellier (France).

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
21068472
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
MONTE CARLO METHOD; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; RELAXATION; SIMULATION
Descriptors DEC
RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS