Published December 1989
| Version v1
Journal article
Monte Carlo modeling of radiation effect on MOS/SOI transistors
Creators
- 1. Paris-11 Univ., 91 - Orsay (France). Inst. d'Electronique Fondamentale
- 2. CEA Centre d'Etudes de Bruyeres-le-Chatel, 91 (France)
Description
A particular Monte-Carlo algorithm has been developed in order to study the relaxation of the electron-hole pairs generated by an irradiation. This algorithm has been used to study the diffusion and the energy relaxation of the carriers inside the MISIS structure corresponding to a MISFET on zirconia on silicon
Abstract (French)
On a developpe et mis en oeuvre un logiciel de simulation particulaire Monte-Carlo pour etudier la relaxation des paires electron-trou generees par une irradiation. Ce logiciel a ete utilise pour etudier l'effet d'un ion a travers les differentes couches constituant un transistor MIS a canal superdope sur zircone epitaxiee sur substrat de silicium. Le comportement de la structure MISIS a ete quantifie du point de vue de la diffusion des porteurs et de la relaxation de leur energieAdditional details
Additional titles
- Original title (French)
- Modelisation Monte-Carlo de l'effet des radiations sur un transistor MOS/SOI
Publishing Information
- Journal Title
- Annales de Physique (Les Ulis), Colloque
- Journal Volume
- 14
- Journal Issue
- 6
- Series
- Ann. Phys. (Les Ulis), Colloq.
- Journal Page Range
- 313-320
Conference
- Title
- Effects on Components and Systems.
- Original Conference Title
- Radiations: Effets sur les Composants et Systemes. Radecs 89
- Acronym
- Radecs 89. Radiations
- Dates
- 11-14 Sep 1989.
- Place
- Montpellier (France).
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 21068472
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- MONTE CARLO METHOD; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; RELAXATION; SIMULATION
- Descriptors DEC
- RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS