Photoluminescence decay dynamics of silver/porous-silicon nanocomposites formed by metal-assisted etching
Creators
- 1. Graduate School of Engineering, Gunma University, Kiryu, Gunma 376-8515 (Japan)
Description
We investigate the photoluminescence (PL) properties of silver/porous-silicon (Ag/PSi) nanocomposites prepared by metal-assisted etching in Ag2O/HF solution, on the basis of steady-state and time-resolved PL spectroscopy measurements. The PL intensity and peak position are strongly dependent on the Ag2O concentration. Time-resolved PL measurements reveal that the nonradiative rate decreases with an increase in the Ag2O concentration for the Ag/PSi nanocomposites. It is found from x-ray photoelectron spectroscopy measurements that the decrease in the nonradiative rate is caused by the formation of SiO2 layers on the PSi surfaces. Further, the number of light-emitting Si nanocrystals in the nanocomposites, which is estimated from the PL decay rate and PL intensity, increases with the Ag2O concentration. From the wavelength dependence of the PL decay rate, it is found that the nonradiative rate is considerably dispersive, i.e., the shorter the wavelength, the higher the nonradiative rate. - Highlights: ► PL properties of Ag/porous-silicon composites by metal-assisted etching in Ag2O/HF are studied. ► Time resolved PL reveals that the nonradiative rate decreases with increase in Ag2O concentration. ► The number of light emitting Si nanocrystals in the composites increases with Ag2O concentration. ► The wavelength dependence of PL decay rate shows that the nonradiative rate is dispersive.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jlumin.2012.06.031Additional details
Identifiers
- DOI
- 10.1016/j.jlumin.2012.06.031;
- PII
- S0022-2313(12)00370-5;
Publishing Information
- Journal Title
- Journal of Luminescence
- Journal Volume
- 132
- Journal Issue
- 11
- Journal Page Range
- p. 3019-3026
- ISSN
- 0022-2313
- CODEN
- JLUMA8
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44109111
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COMPOSITE MATERIALS; ETCHING; FREQUENCY DEPENDENCE; LAYERS; NANOSTRUCTURES; PHOTOLUMINESCENCE; POROUS MATERIALS; SILICON; SILICON OXIDES; SILVER; SILVER OXIDES; STEADY-STATE CONDITIONS; SURFACES; TIME RESOLUTION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CHALCOGENIDES; ELECTRON SPECTROSCOPY; ELEMENTS; EMISSION; LUMINESCENCE; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHOTON EMISSION; RESOLUTION; SEMIMETALS; SILICON COMPOUNDS; SILVER COMPOUNDS; SPECTROSCOPY; SURFACE FINISHING; TIMING PROPERTIES; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.