MOCVD of p-CdxHg1-xTe/GaAs heteroepitaxial structures

Using the method of chemical deposition the p-type epitaxial layers of CdxHg1-xTe on substrates of semi-insulating GaAs of (111)B crystallographic orientation are grown from alkyl metalloorganic cadmium and tellurium and metallic mercury vapors (MOCVD-method). The layers of CdxHg1-xTe are obtained by the deposition of alternating thin CdTe and HgTe layers at a substrate temperature of 350 Deg C with subsequent homogenization of the structure on post-growth annealing. The layers with x 0.2-0.4 are produced, charge carrier density and mobility at 77 K being (1-5) x 1016 cm-3 and 200-400 cm2/(V s) respectively, and a half width of X-ray diffraction oscillation curve being 2-4 angular min