Published February 2010
| Version v1
Journal article
ITEP MEVVA ion beam for rhenium silicide production
Creators
- 1. Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation)
- 2. Moscow Institute of Electronic Technology, Zelenograd, Moscow 124498 (Russian Federation)
Description
The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.
Additional details
Identifiers
- DOI
- 10.1063/1.3264636;
Publishing Information
- Journal Title
- Review of Scientific Instruments
- Journal Volume
- 81
- Journal Issue
- 2
- Journal Page Range
- p. 02B905-02B905.4
- ISSN
- 0034-6748
- CODEN
- RSINAK
Conference
- Title
- 13. international conference on ion sources
- Acronym
- ICIS 2009
- Dates
- 20-25 Sep 2009
- Place
- Gatlinburg, TN (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44013880
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ION BEAMS; ION IMPLANTATION; ION SOURCES; MASS SPECTROSCOPY; MICROANALYSIS; RADIATION DOSES; RESEARCH PROGRAMS; RHENIUM IONS; RHENIUM SILICIDES; SEMICONDUCTOR MATERIALS; SILICON; THIN FILMS; X-RAY DIFFRACTION; X-RAY EMISSION ANALYSIS
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; CHEMICAL ANALYSIS; COHERENT SCATTERING; DIFFRACTION; DOSES; ELEMENTS; FILMS; IONS; MATERIALS; NONDESTRUCTIVE ANALYSIS; REFRACTORY METAL COMPOUNDS; RHENIUM COMPOUNDS; SCATTERING; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; SPECTROSCOPY; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2010 American Institute of Physics