Published February 2010 | Version v1
Journal article

ITEP MEVVA ion beam for rhenium silicide production

  • 1. Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation)
  • 2. Moscow Institute of Electronic Technology, Zelenograd, Moscow 124498 (Russian Federation)

Description

The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.

Additional details

Identifiers

Publishing Information

Journal Title
Review of Scientific Instruments
Journal Volume
81
Journal Issue
2
Journal Page Range
p. 02B905-02B905.4
ISSN
0034-6748
CODEN
RSINAK

Conference

Title
13. international conference on ion sources
Acronym
ICIS 2009
Dates
20-25 Sep 2009
Place
Gatlinburg, TN (United States)

Optional Information

Notes
(c) 2010 American Institute of Physics