Published October 1991 | Version v1
Journal article

Effect of temperature on F2-center formation in F2+-center charge transfer

  • 1. Tomskij Inzhenerno-Stroitel'nyj Inst., Tomsk (Russian Federation)

Description

Formation of F2-centres under electron localization within F2+-centres preliminary formed in crystal is studied using techniques of pulse luminescence and absorption spectrometry with nanosecond time resolution. (F2+ + e) system is detected to be in emitting singlet or triplet states further transitions from which result in formation of F2-centers in basic singlet state. Temperature dependences of formation efficiencies of F2-centre different spin states within 80-300 K temperature range are determined to be anticymbate ones at constant yield of total number of F2-centers formed at electron localization in F2+-centers. Formation of F2-centers in emitting singlet state dominates within 80 K range

Additional details

Additional titles

Original title (Russian)
Влияние температуры на образование Ф

Publishing Information

Journal Title
Fizika Tverdogo Tela
Journal Volume
33
Journal Issue
10
Journal Page Range
p. 2801-2805.
ISSN
0367-3294
CODEN
FTVTAC