Crystal growth of vanadium by arc-zone melting
Description
This paper reports on crystal growth by the arc-zone melting technique that has been used over the past 25 years to prepare single crystals of the refractory metals and their alloys. During arc-zone melting only the upper surface of the metal is melted yet the entire cross section of the rod becomes single crystalline. A process parameter study was conducted to determine the operating mechanisms of crystal growth. Crystal growth occurs in the solid state and is a result of large scale grain boundary migration. A minimum power input to the arc is required to prepare crystals and this was related to minimum temperature necessary for boundary migration. A series of quenching experiments indicates that boundary migration is driven by abnormal grain growth processes. One unique advantage of this technique over conventional crystal growth methods is in the preparation of alloys containing a volatile component such as Al, Cr or Mn. Loss of the high vapor pressure component during arc-zone melting is restricted only to the molten region and a crystal of the desired composition can be sectioned from the lower portion of the finger
Additional details
Publishing Information
- Publisher
- The Metallurgical Society Inc.
- Imprint Place
- Warrendale, PA (United States)
- Imprint Title
- 120th TMS annual meeting
- Imprint Pagination
- 146 p.
- Journal Page Range
- p. 64.
Conference
- Title
- Annual meeting and exhibition of the Minerals, Metals and Materials Society (TMS).
- Dates
- 17-21 Feb 1991.
- Place
- New Orleans, LA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23052683
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- ALUMINIUM ADDITIONS; CHEMICAL COMPOSITION; CHEMICAL PREPARATION; CHROMIUM ADDITIONS; CRYSTAL GROWTH METHODS; EXPERIMENTAL DATA; GRAIN BOUNDARIES; LATTICE PARAMETERS; MANGANESE ADDITIONS; MONOCRYSTALS; SOLID-STATE PLASMA; VANADIUM; ZONE MELTING
- Descriptors DEC
- CRYSTAL STRUCTURE; CRYSTALS; DATA; ELEMENTS; INFORMATION; MELTING; METALS; MICROSTRUCTURE; NUMERICAL DATA; PHASE TRANSFORMATIONS; PLASMA; SYNTHESIS; TRANSITION ELEMENTS
Optional Information
- Secondary number(s)
- CONF-910202--.