Published January 30, 2015 | Version v1
Journal article Metadata-only

AlGaAs/GaAs photodetectors for detection of luminescent light from scintillators

Creators

  • 1. National University of Science and Technology <sup>M</sup>oscow Institute of Steel and Alloys<sup>,</sup> PO Box 409, Moscow 119313 (Russian Federation)
  • 2. P.N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy pr., Moscow 119049 (Russian Federation)

Description

The AlxGa1-xAs / GaAs photosensitive heterostructures were grown by molecular beam epitaxy. On their basis the discrete photodiodes (PD) and phototransistors (PT) operating in the visible (0.4–0.7 μm) wavelength range and having photosensitive area diameters of 1.5 mm and 180 pm correspondingly were created. The current-voltage and spectral characteristics of discrete PD and PT were measured and analyzed. Distinctive features of the proposed photodetectors are a high monochromasy with the maximal sensitivity of 0.13 A/W at λ = 530-570 nm and a low dark current of 4.7 nA and 530 pA at 5 V reverse bias for PD and PT correspondingly

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/586/1/012018

Additional details

Identifiers

DOI
10.1088/1742-6596/586/1/012018;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
586
Journal Issue
1
Journal Page Range
[6 p.]
ISSN
1742-6596

Conference

Title
16. Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics
Dates
24-28 Nov 2014
Place
St Petersburg (Russian Federation)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47029141
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM ARSENIDES; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; GALLIUM ARSENIDES; HETEROJUNCTIONS; LUMINESCENCE; MOLECULAR BEAM EPITAXY; PHOSPHORS; PHOTODETECTORS; PHOTODIODES; PHOTOTRANSISTORS; SENSITIVITY; VISIBLE RADIATION
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; CURRENTS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; EMISSION; EPITAXY; GALLIUM COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; TRANSISTORS