Published January 2009 | Version v1
Journal article Metadata-only

Low-damage and high-rate sputtering of silicon surfaces by ethanol cluster ion beam

Creators

  • 1. Kyoto Univ., Photonics and Electronics Science and Engineering Center, Kyoto (Japan)

Description

To realize the high-rate and low-damage sputtering of a Si surface, the effect of irradiating an ethanol cluster ion beam on a Si surface was investigated. The sputtering depths in Si substrates induced by the ethanol cluster ion beam irradiation were larger than those in SiO2 substrates, which was due to a chemical sputtering effect. The lattice disorder and the surface roughness of the Si substrates decreased with increasing retarding voltage. (author)

Additional details

Identifiers

DOI
10.1143/APEX.2.016504;

Publishing Information

Journal Title
Applied Physics Express
Journal Volume
2
Journal Issue
1
Journal Page Range
p. 016504.1-016504.3
ISSN
1882-0778

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
40081892
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CLUSTER BEAMS; CRYSTAL LATTICES; DAMAGE; DEPTH; ETHANOL; ION BEAMS; ION PAIRS; IRRADIATION; ROUGHNESS; SILICON; SILICON OXIDES; SPUTTERING; SUBSTRATES; SURFACES
Descriptors DEC
ALCOHOLS; BEAMS; CHALCOGENIDES; CRYSTAL STRUCTURE; DIMENSIONS; ELEMENTS; HYDROXY COMPOUNDS; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; SURFACE PROPERTIES

Optional Information

Notes
Available from doi: http://dx.doi.org/10.1143/APEX.2.016504; 17 refs., 4 figs.