Displacement damage degradation of ion-induced charge in Si pin photodiode

Photonic devices operating in space must exhibit high-radiation hardness due to prolonged exposure to high-energy radiation fields. The device performance can be influenced by both the transient effect of electron-hole plasma generation due to stopping of high-energy particles, and the accumulated effect of damage introduced by a flux of particles. The complex relationship between the two is an increasingly important area of research. Here we investigate charge collection characteristics of in situ ion beam induced damaged samples by measuring single event transient currents induced by heavy ions. Results from this study suggest that the ion-induced charge degradation can be predicted for any ion species and energy using the concept of non-ionizing energy loss and displacement damage dose