The introduction of misfit dislocations in HgCdTe epitaxial layers

The variation of misfit with composition and temperature in the HgCdTe/CdTe bicrystal system and its effect on the introduction of misfit dislocations are investigated. It is shown that the critical thickness for the introduction of misfit dislocations is of the order of 0.1 μm for Hg-rich material. Alternative substrate materials to CdTe are considered and the effect of interdiffusion between the substrate and epilayer material on the introduction of dislocations is discussed. (author)