Published May 14, 2007 | Version v1
Journal article Metadata-only

Faceting during GaAs quantum dot self-assembly by droplet epitaxy

Creators

  • 1. Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary)
  • 2. Institut fuer Angewandte Physik und Zentrum fuer Mikrostrukturforschung, Jungiusstrasse 11, D-20355 Hamburg (Germany)

Description

Strain-free GaAs quantum dots (QDs) are grown in a self-assembled fashion by applying Ga droplet epitaxy. The QDs are studied using electron diffraction and atomic force microscopy. Two distinct regimes are observed for the QD shape. QDs whose volume exceeds approximately 3x105 Ga atoms are shaped like truncated pyramids with side facets having an angle of about 55 deg. . Smaller QDs are pyramidlike with 25 deg. facets

Additional details

Identifiers

DOI
10.1063/1.2737123;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
90
Journal Issue
20
Journal Page Range
p. 203105-203105.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39001249
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DROPLETS; ELECTRON DIFFRACTION; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; SEMICONDUCTOR MATERIALS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; MICROSCOPY; NANOSTRUCTURES; PARTICLES; PNICTIDES; SCATTERING

Optional Information

Notes
(c) 2007 American Institute of Physics