Published August 2011 | Version v1
Journal article

CMOS highly linear direct-conversion transmitter for WCDMA with fine gain accuracy

  • 1. State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203 (China)

Description

A highly linear, high output power, 0.13 μm CMOS direct conversion transmitter for wideband code division multiple access (WCDMA) is described. The transmitter delivers 6.8 dBm output power with 38 mA current consumption. With careful design on the resistor bank in the IQ-modulator, the gain step accuracy is within 0.1 dB, hence the image rejection ratio can be kept below -47 dBc for the entire output range. The adjacent channel leakage ratio and the LO leakage at 6.8 dBm output power are -44 dBc - 5 MHz and -37 dBc, respectively, and the corresponding EVM is 3.6%. The overall gain can be programmed in 6 dB steps in a 66-dB range.

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/32/8/085010

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
32
Journal Issue
8
Journal Page Range
[6 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43015285
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ACCURACY; CONVERSION; CURRENTS; GAIN; LEAKS; RESISTORS
Descriptors DEC
AMPLIFICATION; ELECTRICAL EQUIPMENT; EQUIPMENT