Published January 3, 2005 | Version v1
Journal article Metadata-only

Enhancement of hole injection using O2 plasma-treated Ag anode for top-emitting organic light-emitting diodes

Creators

  • 1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Kyungbuk 790-784 (Korea, Republic of)
  • 2. LG Electronics Inc., Kumi, Kyungbuk, 730-030 (Korea, Republic of)
  • 3. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Kyungbuk 790-784, Korea (Korea, Republic of)

Description

We report the enhancement of hole injection using AgOx layer between Ag anode and 4,4'-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl in top-emitting organic light-emitting diode (OLED). The turn-on voltage of OLEDs decreased from 17 to 7 V as Ag changed to AgOx by the surface treatment using O2 plasma. Synchrotron radiation photoelectron spectroscopy results showed that the work function increased about 0.4 eV by the O2 plasma treatment. This led to the decrease of the energy barrier for hole injection, reducing the turn-on voltage of OLEDs

Additional details

Identifiers

DOI
10.1063/1.1846149;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
86
Journal Issue
1
Journal Page Range
p. 012104-012104.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36080137
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANODES; BIPHENYL; ELECTRIC POTENTIAL; HOLE MOBILITY; HOLES; LAYERS; LIGHT EMITTING DIODES; ORGANIC SEMICONDUCTORS; PHOTOELECTRON SPECTROSCOPY; PLASMA; SILVER; SILVER OXIDES; SURFACE CLEANING; SURFACE TREATMENTS; SYNCHROTRON RADIATION; WORK FUNCTIONS
Descriptors DEC
AROMATICS; BREMSSTRAHLUNG; CHALCOGENIDES; CLEANING; ELECTRODES; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; FUNCTIONS; HYDROCARBONS; MATERIALS; METALS; MOBILITY; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SILVER COMPOUNDS; SPECTROSCOPY; SURFACE FINISHING; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Notes
(c) 2005 American Institute of Physics