Catalytic growth of vertically aligned SnS/SnS₂ p–n heterojunctions

Nanowire arrays of SnS/SnS₂ p–n heterojunctions are grown on transparent indium tin oxide (ITO) coated-glass and Si/SiO₂ substrates via chemical vapor transport (CVT). The nanowire arrays are comprised of individual SnS/SnS₂ heterostructures that are highly oriented with their lengths and morphologies controlled by the CVT conditions (i.e. reaction temperature, flow rate, and reaction time). The growth and optoelectronic characterization of these well-defined SnS/SnS₂ p–n heterostructures pave the way for the fabrication of highly efficient solar cell devices. (paper)