Fatigue characteristics of polycrystalline silicon thin-film membrane and its dependence on humidity
Creators
- 1. Electronics R and D Division, DENSO CORPORATION, 500-1 Minamiyama, Komenoki-cho, Nisshin, Aichi 470-0111 (Japan)
- 2. Department of Micro Engineering, Graduate School of Engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto 606-8501 (Japan)
Description
This paper describes fatigue characteristics of a polycrystalline silicon thin-film membrane under different humidity evaluated by out-of-plane resonant vibration. The membrane, without the surface of sidewalls by patterning of photolithography and etching process, was applied to evaluate fatigue characteristics precisely against the changes in the surrounding humidity owing to narrower deviation in the fatigue lifetime. The membrane has 16 mm square-shaped multilayered films consisting of a 250 or 500 nm thick polysilicon film on silicon dioxide and silicon nitride underlying layers. A circular weight of 12 mm in diameter was placed at the center of the membrane to control the resonant frequency. Stress on the polysilicon film was generated by deforming the membrane oscillating the weight in the out-of-plane direction. The polysilicon film was fractured by fatigue damage accumulation under cyclic stress. The lifetime of the polysilicon membrane extended with lower relative humidity, especially at 5%RH. The results of the fatigue tests were well formulated with Weibull's statistics and Paris' law. The dependence of fatigue characteristics on humidity has been quantitatively revealed for the first time. The crack growth rate indicated by the fatigue index decreased with the reduction in humidity, whereas the deviation of strength represented by the Weibull modulus was nearly constant against humidity. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0960-1317/23/3/035032Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Micromechanics and Microengineering. Structures, Devices and Systems
- Journal Volume
- 23
- Journal Issue
- 3
- Journal Page Range
- [11 p.]
- ISSN
- 0960-1317
- CODEN
- JMMIEZ
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47053962
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CRACK PROPAGATION; ETCHING; FATIGUE; HUMIDITY; LAYERS; MEMBRANES; POLYCRYSTALS; SILICON; SILICON NITRIDES; SILICON OXIDES; STATISTICS; STRESSES; SURFACES; THIN FILMS; WEIGHT
- Descriptors DEC
- CHALCOGENIDES; CRYSTALS; ELEMENTS; FILMS; MATHEMATICS; MECHANICAL PROPERTIES; MOISTURE; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; SEMIMETALS; SILICON COMPOUNDS; SURFACE FINISHING